Apparatus and method for manufacturing semiconductor grains

ABSTRACT

A crucible is formed of a cylindrical body member and a disk-shaped nozzle member fitted to the bottom portion of the body member, and the nozzle member is provided with a nozzle hole for discharging out a semiconductor molten solution dropwise therethrough. The semiconductor molten solution drops discharged out of the crucible through the nozzle hole are cooled and solidified during falling to become semiconductor grains. Silicon grains having high crystal quality can be manufactured at low cost.

This application is based on applications Nos. 2001-325471, 2001-361551,2001-392776 and 2002-020777 filed in Japan, the content of which isincorporated hereinto by reference.

FIELD OF INVENTION

The present invention relates to an apparatus and a method formanufacturing semiconductor grains.

DESCRIPTION OF THE RELATED ART

In developing next-generation solar batteries using silicon grains havebeen actively developed from the viewpoint of reducing the use amount ofsilicon and the manufacturing cost.

A method for manufacturing silicon grains will be described in thefollowing.

As a material for manufacturing silicon grains, minute silicon grainsobtained by grinding single crystal silicon material are used.

The material silicon grains are classified by shape or weight, thenheated by the use of infrared rays or a high frequency coil, andthereafter allowed to free-fall to be made into spherical shapes,whereby silicon grains are manufactured.

However, this method requires steps of grinding and classification, sothat the manufacturing process becomes complicated and long,disadvantageously to lower the productivity.

Further, since the shapes of the original silicon grains as the startingmaterial influence the shapes of the resultant silicon spheres, uniformshapes and weights of original silicon grains are requested formanufacturing a solar battery element having a high convertingefficiency.

An object of the present invention, is to provide an apparatus andmethod for manufacturing semiconductor grains, for use in manufacturinga solar battery and the like, capable of manufacturing semiconductorgrains having a high crystal quality stably, efficiently and at a lowcost.

SUMMARY OF THE INVENTION

The inventors have repeatedly made experiments and studies on theproductivity and the crystal quality in providing semiconductor grainsfor use in a solar battery, and have come to have the followingthoughts.

{circle around (1)} as a crystal grain has a smaller granular diameter,the crystal quality of the grain is more improved, and in due course,the grain can become a single crystal. In other words, in a molten grainhaving a larger granular diameter, a number of cores as seed forcrystallization are generated in the crystal. Therefore, withoutstrictly controlling the temperature for growing crystal, the grainbecomes polycrystalline.

{circle around (2)} Further, the sufficient size of a crystal grainrequired for manufacturing a solar battery element in the viewpoint ofthe optical absorbing efficiency is about 300 μm, which value is equalto the thickness of a bulk polycrystal.

From above, the granular diameter of a semiconductor grain used for asolar battery element has only to be reduced to a value not more thanthe thickness of a bulk crystal. With this preposition, if semiconductorgrains respectively having uniform spherical shapes and excellentcrystal quality can be inexpensively and conveniently manufacturedwithout need of complicated steps, a reliable solar battery having anexcellent quality can be provided at a low cost.

{circle around (1)} In an apparatus for manufacturing semiconductorgrains, a crucible comprises a cylindrical body member and a disk-shapednozzle member to be fitted to the bottom portion of the body member, thenozzle member being provided a nozzle hole for discharging out thesemiconductor molten solution in the shape of drops therefrom.

Thereby, if the nozzle hole is worn to become large, only the nozzlemember can be exchanged, so that semiconductor grains respectivelyhaving uniform diameters can be manufactured.

Further, according to a method for manufacturing semiconductor grains ofthe present invention, when the semiconductor molten solution isdischarged out in the shape of drops from the nozzle member to allow tofree-fall, a pressure is applied to the semiconductor molten solution inthe crucible to discharge the same from the nozzle member in the shapeof drops. Thereby, it becomes possible to manufacture semiconductorgrains having uniform granular diameters and high crystallinity degreerespectively.

{circle around (2)} In the method for manufacturing semiconductor grainscomprising discharging the semiconductor molten solution from the nozzlemember in the shape of drops to allow to free-fall, and cooling andsolidifying the same during the free-falling, the inventors haveobserved carefully such a phenomenon that grains of high crystallinitydegree can be confirmed at high frequency in a highly abrasive (easilyworn) nozzle member material, but the crystallinity degree of a grain islowered in a nozzle member material in which the abrasiveness is limited(hardly worn) for obtaining a long life of the nozzle member.

As a result of analyzing this phenomenon, the inventors have found that,due to abrasion of the nozzle member material, minute particles of thenozzle member material are mixed into the semiconductor molten solutionto be discharged and the semiconductor molten solution grows crystalwith the minute particles acting as the cores or seeds, wherebysemiconductor grains having high crystallinity degree can be obtained.And the inventors have made the present invention based on this finding.

As mentioned above, a method for manufacturing semiconductor grainsaccording to the present invention includes steps of preliminarilymixing seeds acting as cores of crystallization into a semiconductormolten solution, then discharging out the semiconductor molten solutiondropwise through the nozzle hole of the crucible to allow to free-fall,and cooling and solidifying the semiconductor molten solution duringfalling. The obtained semiconductor grains are of improved crystalquality and therefore they have an extremely high industrial value.

{circle around (3)} In an apparatus for manufacturing semiconductorgrains according to the present invention, surface-treated is providedon such a portion of the inner wall surface of the crucible thatcontacts the semiconductor molten solution when the semiconductor moltensolution in the crucible is discharged out through the nozzle hole tomake semiconductor grains.

By such surface-treatment, particle formation on the inner wall of thecrucible can be prevented. As a result, corrosion of the crucible isstopped and semiconductor grains having a carbon or other impurityconcentration can be formed, so that a solar battery having a highconverting efficiency can be manufactured.

{circle around (4)} It is necessary to prevent drops of semiconductormolten solution from contacting and being bound together to becomelarge-sized grains, in the process of discharging out the semiconductormolten solution in the shape of drops through the nozzle hole of thecrucible to allow to free-fall, and cooling and solidifying thesemiconductor molten solution during falling.

When drops of semiconductor molten solution contact one another duringfalling in an inert gas atmosphere at a high temperature, they areusually bound to become large-sized grains. In addition, when a siliconmaterial, which is expanded in volume during solidification, is used,projections are formed on the surface of grains obtained by cooling andsolidifying the semiconductor molten solution drops during falling, dueto reduction of the volume expansion.

Therefore, according to the present invention, the inert gas atmosphereis adjusted to an atmosphere containing oxygen. Thereby, if the dropsone another at a high temperature, they are not bound during falling, sothat the drops can be prevented from becoming large-sized. This isbecause each drop forms its surface layer in an atmosphere containingoxygen. In addition, after falling in an atmosphere containing oxygen,each grain shows an apparent spherical shape and no projection is formedon its surface due to reduction of volume expansion when solidified.

As a result, each grain can be formed in a spherical shape.

Further, in the step of making single crystal, a surface layer formed ofoxidization is required for maintaining the shape of each grain, inorder to re-melt the grain by heating at a temperature higher than itsmelting point.

According to the present invention, since the surface layer is formed inthe inert gas atmosphere containing oxygen as abovementioned, a singlecrystal grain having a shape reflected by the spherical shape as thestarting shape can be obtained after it is re-melted.

The concrete structure of the present invention will be described in thefollowing with reference to the appended drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view showing an embodiment of an apparatus for manufacturingsemiconductor grains according to the present invention.

FIG. 2 is a sectional SEM image of a tear-shaped grain.

FIG. 3 is a sectional SEM image of a diamond-shaped grain.

FIG. 4 is a sectional SEM image of a spherical grain.

FIG. 5 is a view showing another embodiment of an apparatus formanufacturing semiconductor grains according to the present invention.

FIGS. 6(a) to 6(d) are sectional views showing a process formanufacturing a photoelectric converting device with the use of silicongrains according to the present inventions.

FIG. 7 is a view showing a further embodiment of an apparatus formanufacturing semiconductor grains according to the present invention.

FIG. 8 is a view showing a process for manufacturing a photoelectricconverting device with the use of semiconductor grains according to thepresent inventions.

FIG. 9 is a photo showing the shape of a grain of the Example 4-1.

FIG. 10 is a photo showing the shape of a cohered grain of ComparativeExample 4-1.

FIG. 11 is a photo showing the shape of a monodisperse grain ofComparative Example 4-1.

FIG. 12 is a SEM image showing the shape of a grain of the Example 4-2.

FIG. 13 is a SEM image showing the shape of a grain of the ComparativeExample 4-2.

DETAILED DESCRIPTION OF THE INVENTION

First Embodiment

FIG. 1 is a view showing a crucible for manufacturing a semiconductorgrains of an embodiment of the present invention. Numeral 1 indicatesthe whole of the crucible, and numeral 2 indicates a body member,numeral 3 indicating a nozzle member.

The crucible 1 comprises the cylindrical body member 2 and thedisk-shaped member 3 fitted to the bottom portion of the body member 2.

The body member 2 comprises an inner wall member 2a having an inner wallhindering reaction with silicon and an outer wall member 2b disposedoutside the inner wall member 2a. The outer wall member 2b is providedfor reinforcing the body member 2. A screw 4 is threaded on each of theoutside of the inner wall member 2a and the inside of the outer wallmember 2b.

Each of the inner wall member 2a and the outer wall member 2b are formedof a sintered body compacted by casting, hot press or the like. Aluminumoxide, silicon carbide, graphite or the like is suitable for hinderingreaction with silicon, but graphite sintered by hot press is suitable inview of easy processing. When a member is formed of graphite, it is,after processed, washed with an acid for raising its purity, and thenwashed with water and dried to be used.

Provided on the lower side of the crucible 1 is the nozzle member 3having a nozzle hole 3a for discharging out a molten solution of asemiconductor material (hereinafter referred to as semiconductor moltensolution) therefrom. This nozzle member 3 is mounted on the upper sideof a small-diametered portion 2c at the bottom of the outer wall member2b.

After the nozzle member 3 is mounted on the small-diametered portion 2c,the inner wall member 2a is screwed down from above to press and fix thenozzle member 3. Thus the body member 2 is assembled. On the other hand,by upwardly screwing the inner wall member 2a, the nozzle member 3 canbe removed out.

The nozzle member 3 is formed of silicon carbide, diamond, aluminumoxide, cubic boron nitride or the like. The nozzle member 3 is formed byprocessing a single crystal or polycrystalline substance of one of theabovementioned materials or by sintering each material to compact thesame.

It is preferable that, in order to prevent abrasion of the nozzle hole3a and obtain stable semiconductor grains, the nozzle member 3 is formedof any one selected from the group consisting of silicon carbide havinga gravity not less than 3.00 g/cm³, aluminum oxide having a gravity notless than 3.30 g/cm³, cubic boron nitride having a gravity not less than3.15 g/cm³ and diamond having a gravity not less than 3.35 g/cm³.

Further, it is preferable that the nozzle member 3 is formed of any oneselected from the group consisting of single crystal silicon carbide,single crystal aluminum oxide (sapphire), single crystal cubic boronnitride and single crystal diamond, because, with such a material,abrasion of the nozzle hole 3a is surely prevented and stablesemiconductor grains can be obtained.

It is preferable that the diameter of the nozzle hole 3a is 5 μm to 100μm. It is difficult yet in the today's technique to form the diameter ofdrops of the nozzle hole 3a less than 5 μm. Further, if the diameter ofthe nozzle is more than 100 μm, the particle diameter of the drops ofsemiconductor molten solution becomes large, so that excellent crystalis hard to obtain.

It is possible to provide a plurality of nozzle holes 3a in the nozzlemember 3. By providing a plurality of nozzle holes 3a, the productivitycan be raised in accordance with the number of the nozzle holes 3a,which is advantageous in manufacturing.

The flow amount (flow rate) of the semiconductor molten solution fromthe nozzle hole 3a is determined based on the diameter of the nozzlehole 3a and the gaseous pressure. And the spherical diameter of the dropis determined in relation to the surface tension of the molten solutionduring discharging.

The nozzle holes 3a are worked by machining, laser machining orultrasonic machining so that they have the same diameters respectively.In addition, the machining is performed so that the thickness of thenozzle member 3 with respect to the worked diameter of each nozzle hole3a becomes constant.

By forming the body member 2 and the nozzle member 3 of separate membersfrom each other and assembling them into the whole of the crucible 1 asabove-mentioned, only the nozzle member 3 can be exchanged, and theexpensive body member 2 can be repeatedly used.

Silicon material is thrown into such a crucible 1, and the whole of thesilicon material is melted with the use of an induction heater or aresistance heater (not shown). The silicon molten solution 5 is pressedfrom above by argon gas or the like, for example, not more than 0.7 MPa(mega 10⁶ pascals) to be extruded from the nozzle hole 3a of the nozzlemember 3, so that the silicon molten solution is sprayed to make anumber of drops. These drops of the silicon molten solution are allowedto free-fall. During falling, the drops are solidified to become grainsof single crystal silicon or polycrystalline silicon, which arecontained in a container.

If the pressure of this argon gas is less than 0.01 MPa, the siliconmolten solution cannot be jetted out, and in addition, if the pressureis more than 0.7 MPa, the particle diameter of the jetted silicon moltensolution becomes too large to obtain excellent crystal.

The obtained silicon grains are used for manufacturing a solar battery.Therefore, it is preferable that the silicon to be melted containsdesired additional impurities required for fabricating semiconductorgrains.

EXAMPLE 1

A nozzle members 3 having nozzle holes 3a of variety of diametersrespectively worked by laser machining was manufactured to assemble acrucible. Then silicon in the crucible was melted and silicon grainswere manufactured, and the diameters and crystal qualities of theobtained silicon grains were evaluated.

The test was carried out as follows.

18 grams of silicon material was filled into a crucible in an atmosphereof an inert gas such as Ar or He kept at a temperature of 1450° C.through a passage being similarly in an inert gas atmosphere, andmelted. The crucible was formed of graphite (graphite DFP-2 manufacturedby POCO Graphite, Inc. or the like) having dimensions of 19.0 mm φ inthe inner diameter, 25.0 mm φ in the outer diameter and 143 mm inlength. Variously changed gaseous pressures were applied to thesufficiently melted material to spray and discharge the whole amount ofthe molten material straight out through a nozzle hole. At this time,with the gaseous pressure being not more than 0.01 MPa, the moltensolution could not be jet forth through nozzle holes of any diameter.

The grain diameter distribution of the spherical silicon grains producedby this jet and the crystallinity degree thereof were detected. Thegrain diameter distribution was detected by screening the grains througha sieve and calculating the grain diameter distribution based on theratio of the distribution of the grain numbers. The crystallinity degreewas detected by embedding each silicon grain into a resin and grindingand mirror-finishing its sectional surface, thereafter etching with amixed acid of hydrofluoric acid, nitric acid and acetic acid, andobserving the sectional surface, so that the proportion in number of thegrains having 3 to 5 crystal grains with respect to the whole grains wasregarded as the crystallinity degree.

TABLE 1 Nozzle Average Hole Jet Grain Crystallinity Diameter PressureDiameter Degree (μm) (MPa) (μm) (%) Example 30 0.3 254 85 1-1 1-2 40 0.3320 74 1-3 60 0.3 450 63 1-4 100 0.3 850 54 Comparative 120 0.3 1000 231 Example 60 0.2 325 82 2-1 2-2 60 0.5 480 60 2-3 60 0.7 730 55Comparative 60 0.01 Not Not 2-1 Jetted Jetted 2-2 60 0.8 950 38

From Table 1, when the nozzle hole diameter is not less than 30 μm andnot more than 100 μm, the average grain diameter was less than 850 μmand in addition, the crystallinity degree was beyond 50%, and therefore,this case can be estimated as good.

However, working for opening a nozzle hole having a diameter less than30 μm was hard and such working per se could not be performed.

On the other hand, when the nozzle hole diameter is more than 100 μm,the average grain diameter of the obtained grains was as large as morethan 850 μm, and the crystallinity degree thereof rapidly became worse.

The jet pressure is suitably not less than 0.01 MPa and not more than0.7 MPa, and preferably not less than 0.01 MPa and not more than 0.5MPa.

Second Embodiment

In this second embodiment, when silicon material is put into a crucible1 and the whole of the silicon material is melted by the use of aninduction heater or a resistance heater (not shown), grains acting ascores of crystallization are added to the silicon material.

These grains as cores of crystallization are preferably hard to react inthe silicon molten solution. Grains of various kinds of materials can beused, if they do not change their shape or disperse as impurities tocause to lower the semiconductor quality. For example, aluminum oxide,silicon oxide, diamond, graphite or the like can be preferably used.

The silicon molten solution is pressed from above by argon gas or thelike, for example, not more than 0.5 MPa to be extruded from the nozzlehole 3a of the nozzle member 3, so that the silicon molten solution issprayed to make a number of drops. These drops of the silicon moltensolution are allowed to free-fall. During falling, the drops aresolidified to make grains of single crystal silicon or polycrystallinesilicon, which are contained in a container.

EXAMPLE 2

A crucible formed of graphite (graphite DFP-2 manufactured by POCOGraphite, Inc. or the like) having dimensions of 19.0 mm φ in the innerdiameter, 25.0 mm φ in the outer diameter and 143 mm in length was used.The crucible had a nozzle member 3. A nozzle hole 3a of the nozzlemember 3 is formed by laser machining.

The test was carried out as follows.

This crucible was set in a furnace capable of being kept at anatmosphere of an inert gas such as Ar or He, and the temperature was setat 1450° C.

Grains acting as cores were weighed and added to the silicon material,and the mixture was uniformly dispersed in a container such as apolyethylene bag or the like. 18 grams of this silicon materialcontaining the core grains was filled into the crucible kept at thetemperature of 1450° C. through a passage similarly kept in anatmosphere of an inert gas and melted.

Gaseous pressure of 0.15 MPa was applied to the sufficiently meltedsilicon material to spray the whole of the silicon material straightfrom the nozzle hole 3a.

The grain diameter distribution of the spherical silicon grains producedby this jet and the crystallinity degree in the distribution weredetected. The grain diameter distribution was detected by screening thegrains through a sieve and calculating the grain diameter distributionbased on the ratio of the distribution of the grain numbers.

EXAMPLE 2-1

0.02 grams of silicon carbide grains (2-3 μm) as cores were weighed andadded to silicon material, and the mixture was uniformly dispersed in acontainer such as a polyethylene bag or the like. Thereafter, thesilicon material is sprayed under the above-mentioned condition.

The obtained silicon grains were classified by shape. The result wasthat the grains were classified into {circle around (1)} tear-shapedgrains {circle around (2)} diamond-shaped grains and {circle around (3)}spherical grains, and the constitutional ratio was 2:7:1.

The sectional surfaces of the grains of each of the above-mentionedshapes were subjected to SEM (Scanning Electron Microscope) observation,and the result is shown in FIGS. 2 to 4.

The SEM observation was carried out by embedding each silicon grain intoa resin and grinding and mirror-finishing its sectional surface,thereafter sufficiently etching the same with a mixed acid ofhydrofluoric acid, nitric acid and acetic acid, and observing the grainboundary.

FIG. 2 is a SEM image of a tear-shaped grain and FIG. 3 is a SEM imageof a diamond-shaped grain, FIG. 4 being a SEM image of a sphericalgrain.

As shown in the SEM images of FIGS. 2 to 4, deep etch-pits are seen hereand there. The relations of the grain shape, the number of etch-pits andthe number of crystalline grains constituting the silicon grain wereclassified as follows.

{circle around (1)} (FIG. 2) A number of etch-pits were observed, butthe number of the crystal grains constituting the silicon grain wasabout 3 to 5.

{circle around (2)} (FIG. 3) A number of etch-pits were observedsimilarly to {circle around (1)}, but the grain consisted of a singlegrain (twin crystal) having a high crystal quality. In addition, in thediamond-shaped grain {circle around (2)}, an extraordinary granularetching form (core) was observed on the twin crystal line.

{circle around (3)} (FIG. 4) It was proved that this grain was apolycrystalline substance in which the central portion was constitutedby granular crystal and the peripheral portion had prismatic crystal.

Comparative Example 2-1

Silicon material was sprayed according to the method of Example 2 butwithout adding core grains. The obtained grains were classified byshape.

The result was that the grains were classified into {circle around (1)}tear-shaped grains and {circle around (3)} spherical grains, and theconstitutional ratio was 1:9. {circle around (2)} Diamond-shaped grainswere hardly observed.

EXAMPLE 2-2

Core grains were added to silicon material as shown in Table 2, and thesilicon material was sprayed according to the method of Example 1 toproduce silicon grains. The grains were classified by shape by observingunder a telescope. The silicon grains manufactured as a ComparativeExample without adding core grains were similarly classified by shape.

TABLE 2 Diamond- Tear- Spherical Crystallinity Added grains shapedshaped shaped Degree (%) Example 2-1 70 18 12 88 Silicon Carbide Example2-2 68 17 15 85 Aluminum Oxide Example 2-3 65 16 19 81 Silicon OxideExample 2-4 72 22 6 94 Diamond Example 2-5 68 17 15 85 GraphiteComparative 4 8 88 12 2 Not Added

The constitutive ratio of the shapes of the sprayed silicon grains inthe case of adding core grains was apparently different frond that inthe case of not adding core grains.

When the core grains were added, highest was the constitutive proportionof the diamond-shaped grains, which showed a high crystal quality inExample 2-1.

Third Embodiment

FIG. 5 is a view showing another embodiment of an apparatus formanufacturing silicon grains according to the present invention.

An outer wall member 2b of a crucible 1 can be formed of Aluminum oxide,silicon carbide, graphite, boron nitride, silicon nitride or the likefrom the point of view of its necessary strength at temperatures near1450° C. which is the melting point of silicon.

Since an inner wall 2a directly contacts silicon molten solution 5, aninner wall member 2a is preferably formed of silicon carbide SiC,graphite or the like which is hard to react with the silicon moltensolution. However, graphite sintered by hot press is most preferablefrom the point of view of easiness to work and low cost.

When sintered graphite is used for manufacturing the crucible formelting silicon material, it is formed so dense as to have a density ofabout 1.8.

However, air bubbles are still present inside the inner wall member ofthe crucible. If the sectional surface of a graphite crucible isexamined by SEM, it is confirmed that silicon has permeated as deep as300 to 400 μm from the surface. It is presumable that, in the process ofthis corrosion, particles released from the graphite-formed innersurface of the crucible react with the silicon molten solution andcarbon comes out as impurities. Further, even if a crucible is formed ofanother material, more or less corrosion proceeds at the temperature ofthe silicon molten solution and thereby impurities come out.

Therefore, according to the present invention, an inner wall portion ofan inner wall member 2a, which contacts a silicon molten solution, issurface-treated in order to prevent particles from being released.

There are two kinds of surface-treatments as the following (1), (2).

(1) A coating of silicon carbide is formed. The coating of siliconcarbide is formed by CVD method and the like. Since the inner surfaceportion of the inner wall member 2a, which contacts silicon moltenmaterial 5, is an inner surface of a pipe in shape, a gas flow in theCVD method is hard to reach the portion and a uniform amount of coatingthroughout the whole of the inner surface of the pipe is hard to beensured. However, it is possible to provide a sufficient thickness ofcoating on the inner surfaces portion by selecting optimum coatingconditions.

(2) A coating of amorphous carbon is formed by impregnating with a resinand heat-treatment. This method is applied to a case in which the innerwall member 2a is formed of graphite. The graphite is dipped in aspecified resin so as to impregnate the air bubbles with the resin.Thereafter, by heating to a predetermined temperature, the graphite isbaked to change the surface of the carbon mold to a dense surface. Oneexample of such a treatment is glassy carbon by Tokai Carbon Co., Ltd.((2) ends here).

By such a treatment, corrosion is stopped, so that silicon grains with alow impurity concentration can be formed and a photoelectric convertingdevice having a high converting efficiency can be provided.

A nozzle member 3 is provided separately from the cylindrical crucible 1and is disposed inside the lower end portion of the crucible body 1. Thenozzle member 3 is formed of, silicon carbide, diamond, aluminum oxide,cubic boron nitride or the like. Further, the nozzle member 3 has anozzle hole 3a for discharging a silicon molten solution 5. A pluralityof nozzle holes may be provided. The nozzle hole 3a is worked bymachining or laser machining in such a manner that the inner diameter ofthe lower end of the nozzle hole 3a is a predetermined value.

After the inner wall member 2a, the outer wall member 2b and the nozzlemember 3 are formed respectively into predetermined shapes, they arewashed with an acid, washed with water and dried. Then, the nozzlemember 3 is disposed at the bottom portion of the outer wall member 2b,and the inner wall member 2a is set inside the outer wall member 2b toassemble the crucible 1.

Silicon material is fed into the crucible 1 having such a structure, andit is melted with the use of an induction heater or a resistance heaterto make a silicon molten solution 5. The silicon molten solution 5 ispressed from above by a gas such as an inert gas to be extruded from thenozzle hole 3a of the nozzle member 3, so that a large number of droppedmolten silicon are sprayed. During falling, the silicon drops aresolidified to become grains of single crystal or polycrystallinesilicon, which are contained in a container (not shown).

The silicon grains 6 are used for manufacturing a solar battery.Therefore, it is preferable to make the silicon material preliminarilycontain desired impurities.

A method for manufacturing a photoelectric converting device (solarbattery) using such silicon grains will be described in the followingwith reference to FIG. 6.

A number of silicon grains 6 containing one conductive typesemiconductor impurities are disposed on a metal substrate 7constituting one-side electrode (FIG. 6(a)). And by heating this at atemperature higher than 600° C., the silicon grains 6 are joined to themetal substrate 7(FIG. 6(b)). An insulating material 8 is interposedbetween respective silicon grains (FIG. 6(c)), and a semiconductor layer9 containing another conductive type semiconductor impurities is formedon the silicon grains 6 to manufacture a photoelectric convertingdevice.

The method is not limited to forming a semiconductor layer 9 containinganother conductive type semiconductor impurities on the silicon grains6, but a region containing another conductive type semiconductorimpurities may be formed on a portion of the surface region of eachsilicon grain.

In the case of manufacturing such a photoelectric converting device asabovementioned, it is necessary to evaluate the physical property valuesof the silicon grains having influences on the converting efficiency.Nowadays, methods for evaluating the physical properties of flatspecimen surfaces such as a silicon wafer surface have been established.However, since the shapes and sizes of the silicon grains manufacturedby spraying as according to the present invention are not uniform, themeasuring methods have not been established, so that it has beendifficult to quantitatively evaluate the physical properties thereof.

However, according to SIMS (Secondary Ion Mass Spectroscopy), theimpurity element concentration of each silicon grain can be measured.Therefore, the relation between the impurity concentration of thesilicon grains measured according to SIMS and the converting efficiencyof a photoelectric converting device manufactured with the use of thesesilicon grains can be considered for evaluating the silicon grains.

The carbon concentration of a silicon grain manufactured by spraying asilicon molten solution from a nozzle hole is measured according toSIMS. The result is that the carbon concentration of the outer surfaceof the grain is higher than that of the inner portion of the grain, butin the portion of the grain more than 5 μm deep from the outer surface,the carbon concentration maintains a fixed value.

when these silicon grains are used, the surface portion of each isremoved by deeper than 5 μm from the outer surface by the use of anacidic solution, dry etching, sand blast or the like, and thereafter thegrains are put into a process of manufacturing a photoelectricconverting device. Therefore, the fixed impurity concentration of thegrain portion deeper than 5 μm from the outer surface is regarded as theimpurity concentration of this grain.

The manufacturing conditions of a photoelectric converting device haveinfluence on the converting efficiency indicating the capability of thephotoelectric converting device.

The converting efficiency is made highest by making optimum theconditions of forming an amorphous or polycrystalline silicon layer 9throughout the upper portions of the silicon grains, and patterns andforming process of a pull electrode formed of Ag paste or the like andprovided on the layer 9.

However, when the carbon content of each silicon grain was more than 50ppm, any photoelectric converting device manufactured with the use ofsuch silicon grains could not have a converting efficiency higher than2% even by making optimum the conditions of the manufacturing process.

The cause is presumed as that, since carbon forms impurity level in bandgaps of the silicon grains to trap carriers, the electromotive force isreduced. In addition, it is presumed as a cause that the diffusionlengths of electrons are reduced due to the impurities.

Therefore, by manufacturing silicon grains using a crucible of which theportion contacting the silicon molten solution has been surface-treatedas abovementioned, the carbon impurity concentration can be lowered tonot more than 50 ppm. A photoelectric converting device manufactured bythe use of these silicon grains can have a converting efficiency notless than 3%, if the conditions of the manufacturing process are madeoptimum.

EXAMPLE 3-1

Graphite material sintered by hot press was worked into predeterminedshapes to form an outer wall member 2b and an inner wall member 2a. Theinner surface of the inner wall member 2a is coated with a siliconcarbide layer according to CVD method. The coating step was carried outso that the thickness of the thinnest portion of the silicon nitridelayer in the innermost portion of the cylindrical inner wall member 2acould be not less than 100 μm.

With the use of a silicon carbide substrate formed according to CVDmethod, a disk-shaped nozzle member 3 was formed to have a thickness of1.0 mm. A nozzle hole 3a was defined in the center of the nozzle member3 by laser machining. By making optimum the laser machining conditions,the diameter of the nozzle hole 3a was made 100 μm at the lower openingof the nozzle member 3. These members were assembled to obtain acrucible having such a structure as shown in FIG. 5.

The obtained crucible was set in a furnace capable of keeping an inertgas atmosphere and the temperature was raised to 1450° C. 18 grams ofsilicon material was fed, through a passage similarly kept in an inertgas atmosphere, into the crucible kept at 1450° C., so that the siliconmaterial was completely melted to form a molten silicon 5. At this time,used was silicon material added with a material containing apredetermined amount of boron to adjust the boron concentration of thewhole of the silicon material to a predetermined optimum value.

After waiting till the silicon material came into a sufficient moltenstate, the molten silicon 5 was pressed by argon gas at a pressure of0.1 MPa to jet out the molten silicon 5 from the nozzle hole 3a, wherebysilicon grains 6 were obtained.

Then, with the use of the obtained silicon grains 6, a solar battery wasmanufactured by a method shown in FIG. 6. First, the silicon grains 6were disposed on a metal substrate 7 (FIG. 6(a)). Next, the whole ofthis was heated to bond the silicon grains 6 to the metal substrate 7(FIG. 6(b)). An insulating layer 8 was formed in the spaces betweenrespective silicon grains (FIG. 6(c)). An amorphous or polycrystallinesilicon layer 9 and transparent conductive layer 11 (ITO) were formed onthe whole of the insulating layer 8 and the upper portions of thesilicon grains (FIG. 6(d)). Since the silicon grains 6 were p-type, thesilicon layer 9 was formed as n-type.

A solar battery was thus obtained and the power generating efficiencythereof was measured.

The metal substrate 7 was one electrode and silver paste was coated onthe transparent conducive layer 11 to form the other electrode 12. Lightof a predetermined strength and a predetermined wavelength was appliedto the solar battery to measure the solar battery characteristics andcalculate the converting efficiency thereof. As a result, the convertingefficiency was 5.3%.

Then, the carbon concentration of the silicon grains 6 was measuredaccording to SIMS and the result was 40 ppm.

EXAMPLE 3-2

Graphite material sintered by hot press was worked into predeterminedshapes to form an outer wall member 2b and an inner wall member 2a. Acoating of amorphous carbon was provided on the surface of the innerwall member 2a by a resin impregnating treatment. In this treatment,with the use of glassy carbon made by Tokai Carbon Co., Ltd and theinner wall member 2a was dipped in a specific resin to impregnate innerair bubbles with the resin and it was heated to a predeterminedtemperature and baked, so that the property of the carbon formed surfacewas changed to become dense. Thereafter, a solar battery wasmanufactured by the similar method to that of Example 1.

The power generating efficiency of the obtained solar battery wasexamined and the result was that the converting efficiency was 4.0%.

Then, the carbon concentration of the silicon grains 6 was measuredaccording to SIMS and the result was 48 ppm.

Comparative Example 3

Graphite material sintered by hot press was worked into predeterminedshapes to form an outer wall member 2b and an inner wall member 2a.Without applying any treatment for preventing particle release to theinner surface of the inner wall member 2a, a solar battery wasmanufactured by the similar method to that of Example 3.

The power generating efficiency of the obtained solar battery wasexamined and the result was that the converting efficiency was 1.2%.

Then, the carbon concentration of the silicon grains 6 was measuredaccording to SIMS and the result was 65 ppm.

Fourth Embodiment

FIG. 7 is a view showing a further embodiment of an apparatus formanufacturing semiconductor grains according to the present invention.The same members with those of FIG. 1 are designated with the samenumbers. Description of the same structure of a crucible with that ofFIG. 1 is omitted.

In this embodiment 4, silicon material is fed into a crucible 1, and thewhole of the silicon material is melted with the use of an inductionheater or a resistance heater (not shown). The silicon molten solution 5is pressed from above by argon gas or the like, for example, not morethan 0.5 MPa to be extruded from the nozzle hole 3a of the nozzle member3, so that the silicon molten solution 5 is sprayed to make a number ofdrops.

These sprayed drops of the silicon molten solution 5 free-fall inside acylindrical body 10 kept in a predetermined gas atmosphere. Duringfalling, the drops are solidified to become grains of single crystal orpolycrystalline silicon, which are contained in a container.

The cylindrical body 10 can be kept airtight. A quartz cylinder, analumina cylinder, a stainless cylinder or the like can be used as thecylindrical body 10.

The pressure and the gas concentration of the atmosphere gas in thecylindrical body 10 can be controlled. The control method is notspecifically limited.

Such silicon grains are used for manufacturing a solar battery.Therefore, it is preferable that the silicon material to be meltedcontains desired semiconductor impurities.

Thereafter, the recovered silicon grains are spread all over a dish-likequartz container and heat-treated together with the quartz container ina baking furnace kept in a predetermined atmosphere. Thereby, thesilicon grains are re-melted, so that single crystal silicon grains canbe manufactured.

With the use of the obtained silicon grains, a photoelectric convertingdevice shown in FIG. 8 is manufactured. First, not less than 5 μm depthof the surface portion of each silicon grain 6 is removed by etching.Next, the silicon grains 6 are disposed on a metal substrate 7. Then thewhole is heated to bond the silicon grains 6 onto the metal substrate 7through a bonding layer 6a. An insulating layer 8 is formed in thespaces between the silicon grains 6 on the metal substrate 7. Anamorphous or polycrystalline silicon layer 9 is coated all over thesame. At this time, since the silicon grains 6 are single conductivep-type or n-type, the silicon layer 9 is formed as reverse conductiven-type or p-type. Further, a transparent conductive layer 11 is formedthereon.

The metal substrate 7 is one electrode and silver paste is coated on thetransparent conductive layer 11 to form the other electrode 12, so thata photoelectric converting device can be obtained.

EXAMPLE 4

Graphite (graphite DFP-2 manufactured by POCO Graphite, Inc. or thelike) was worked to form a crucible having dimensions of 19.0 mm φ inthe inner diameter, 25.0 mm φ in the outer diameter and 143 mm inlength. At the bottom of the crucible, a nozzle member having a nozzlehole defined by laser machining was set.

The crucible was disposed in a furnace capable of being kept in anatmosphere of an inert gas such as Ar or He, and the temperature of thewhole was set at 1450° C.

18 grams of silicon material was fed into this crucible through apassage similarly kept in an inert gas atmosphere, and completelymelted. 0.15 MPa gaseous pressure was applied to the sufficiently meltedsilicon material to spray and discharge out the whole amount of themolten material straight out through the nozzle hole 3a.

The sprayed drops of the silicon material were allowed to free-fall in acylindrical body 10 similarly kept in an inert gas atmosphere, to becooled and solidified. The cylindrical body 10 was one formed of quartz,and the inner pressure thereof was kept equal to the outer pressure.

Ar gas containing oxygen was used for forming the inert gas atmosphere.By setting the oxygen flow amount with respect to the Ar flow amount,the oxygen concentration of the inert gas atmosphere was controlled.

Thereafter, the recovered silicon grains were spread all over adish-like quartz container and heat-treated together with the quartzcontainer in a baking furnace kept in a predetermined atmosphere.Thereby, the silicon grains were re-melted, so that single crystalgrains can be manufactured.

EXAMPLE 4-1

The atmosphere in the cylindrical body 10 was adjusted by controllingthe flow amount of oxygen gas so that the oxygen concentration in thecylindrical body 10 became 2 atoms %. In this atmosphere, the meltedsilicon material was sprayed and allowed to free-fall to be cooled andsolidified. The solidified silicon grains were monodisperse grains,namely, separate grains not coherent to one another. The appearance ofsuch particles is shown in FIG. 9.

Comparative Example 4-1

The same process with that of Example 4-1 was carried out except thatthe oxygen flow was kept in stopped state, and the silicon moltensolution was sprayed and solidified during falling. And the solidifiedsilicon grains were recovered.

The recovered silicon grains included a number of coherent bodies inwhich grains were bonded to one another. The appearance of such acoherent body is shown in FIG. 10. The SEM image of a grain not coherentto one another is shown in FIG. 11.

EXAMPLE 4-2

The silicon grains produced in Example 4-1 were re-melted to make singlecrystal grains. The shapes of the single crystal grains were observed,and a SEM image of one of them is shown in FIG. 12.

Comparative Example 4-2

Among the silicon grains produced in Comparative Example 4-1,monodisperse grains (one being shown as a SEM image in FIG. 11) werere-melted to make single crystal grains similarly to Example 4-2. Theshapes of the single crystal grains were observed, and a SEM image ofone of them is shown in FIG. 13.

Each of the grains allowed to fall and solidified in the atmospherecontaining oxygen maintained a spherical shape without any projectioneven after being re-melted and becoming single crystal as shown inExample 4-2. On the contrary, when the grain having a projectionproduced in Comparative Example 4-2 was re-melted, the projection on thesurface of the grain was still remained.

EXAMPLE 4-3, Comparative Example 4-3

The oxygen concentration in the atmosphere inside the cylindrical body10 was changed stepwise as shown in Table 3, and the silicon moltensolution was sprayed, cooled and solidified during falling.

TABLE 3 Oxygen Conc. of Atmosphere (%) Grain Shape Comparative 1-1 0.01Cohered Example 1-1 0.05 Not cohered  -2 0.5 Not cohered  -3 2.0 Notcohered  -4 10.5 Not cohered  -5 30.0 Not cohered  -6 40.0 Not cohered -7 50.0 Not cohered Comparative 1-2 55.0 Cracked

When the oxygen concentration was lower than 0.05 atoms %, grainscohered to one another and there were no monodisperse grains. Further,when the oxygen concentration was more than 50 atoms %, crackingoccurred in the surface of the grains, so that the grains got out ofshape.

EXAMPLE 4-4, Comparative Example 4-4

From the silicon grains formed in Example 4-3, ones each having a highoxygen concentration in the atmosphere were selected and re-meltedsimilarly to the case of example 4-2 to crystalline the same. Theobtained grains were subjected to etching for removing an oxidized layeron the surface thereof with a mixed acid of hydrofluoric acid and nitricacid. Then, using the grains, such a solar battery as shown in FIG. 8was manufactured. Light of a predetermined strength and a predeterminedwavelength was applied to the solar battery to measure the solar batterycharacteristics and calculate the converting efficiency. The result isshown in Table 4.

On the other hand, separately from the measurement of the convertingefficiency, the oxygen concentrations of the etched silicon grains wereanalyzed from the surface thereof by SIMS. The result is shown in Table4. The analytical values shown here were the fixed oxygen concentrationvalues obtained after inwardly digging the grains from the surfacethereof.

TABLE 4 Oxygen Conc. of Oxygen Conc. Converting Atmosphere of GrainEfficiency atoms % atoms/cm³ % Example 4-1 30.0 3.4 × 10¹⁷ 3.2  -2 40.05.2 × 10¹⁷ 2.8  -3 50.0 2.0 × 10¹⁸ 1.5 Comparative 55.0 2.3 × 10¹⁸ CouldNot 4 Measured

As shown in Table 4, grains each having an oxygen concentration higherthan 2×10¹⁸ atoms/cm³ did not show any photoelectric convertingcharacteristic.

1. A method for manufacturing semiconductor grains comprising steps offilling a semiconductor molten solution into a crucible having acylindrical body member and a disk-shaped nozzle member detachablyfitted to the bottom portion of the body member, applying a pressure tothe semiconductor molten solution in the crucible, discharging outdropwise the semiconductor molten solution through a nozzle holeprovided in the nozzle member, allowing the semiconductor moltensolution to fall to cool and solidify the semiconductor molten solutionduring falling.
 2. A method for manufacturing semiconductor grains asclaimed in claim 1, in which the pressure not less than 0.01 MPa and notmore than 0.7 MPa is applied to the semiconductor molten solution in thecrucible to discharge out dropwise the semiconductor molten solutionthrough the nozzle hole.
 3. A method for manufacturing semiconductorgrains as claimed in claim 1, in which a semiconductor material ismelted in the crucible to form the semiconductor molten solution.
 4. Amethod for manufacturing semiconductor grains as claimed in claim 1, inwhich the semiconductor material is silicon.
 5. A method formanufacturing semiconductor grains as claimed in claim 1, wherein thebody member comprises an inner wall member having an inner wall forhindering reaction with silicon and an outer wall member disposedoutside the inner wall member for reinforcing the body member.
 6. Amethod for manufacturing semiconductor grains comprising steps of addinggrains acting as cores of crystal to a semiconductor material, filling asemiconductor molten material of the semiconductor material into acrucible, discharging out the semiconductor molten solution dropwisethrough a nozzle hole provided in the crucible to allow thesemiconductor molten material to fall, and cooling and solidifying themolten material during falling, wherein the grains acting as cores ofcrystal are formed of one or two selected from the group consisting ofsilicon carbide, aluminum oxide, silicon oxide, diamond and graphite. 7.A method for manufacturing semiconductor grains as claimed in claim 6,in which a pressure is applied to the semiconductor molten solution inthe crucible to discharge out dropwise the semiconductor molten solutionthrough the nozzle hole.
 8. A method for manufacturing semiconductorgrains as claimed in claim 6, in which the semiconductor material issilicon.
 9. A method for manufacturing semiconductor grains comprisingsteps of feeding a semiconductor molten material into a crucible,discharging out dropswise the semiconductor molten solution through anozzle hole provided in the crucible to allow the semiconductor moltenmaterial to fall in an atmosphere containing oxygen, and cooling andsolidifying the molten material during falling to form semiconductorgrains, wherein the oxygen concentration of the resultant semiconductorgrains is less than 2×10¹⁸ atoms/cm³.
 10. A method for manufacturingsemiconductor grains as claimed in claim 9, in which the resultantsemiconductor grains are heat-treated to make single crystalsemiconductor grains.
 11. A method for manufacturing semiconductorgrains as claimed in claim 9, in which the semiconductor is silicon. 12.A method for manufacturing semiconductor grains as claimed in claim 9,in which the atmosphere containing oxygen is argon containing oxygen orhelium containing oxygen.
 13. A method for manufacturing semiconductorgrains comprising steps of feeding a semiconductor molten material intoa crucible, discharging out dropwise the semiconductor molten solutionthrough a nozzle hole provided in the crucible to allow thesemiconductor molten material to fall in an atmosphere containingoxygen, and cooling and solidifying the molten material during fallingto form semiconductor grains, wherein the oxygen concentration of theatmosphere is not less than 0.05 atom % and not more than 50 atom %. 14.A method for manufacturing semiconductor grains comprising: feeding asemiconductor molten material into a crucible; discharging out dropwisethe semiconductor molten material through a nozzle hole provided in thecrucible; cooling and solidifying the molten material during falling toform semiconductor grains; and re-melting the resultant semiconductorgrains at a temperature higher than its melting point to make singlecrystal semiconductor grains.